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MOSFET DIFFERENTIATED MOSFETS - Pack of 10 (IPB017N10N5LFATMA1)

  • Number of Channels: 1 Channel
  • Transistor Polarity: N-Channel
  • Vds - Drain-Source Breakdown Voltage: 100 V
  • Id - Continuous Drain Current: 180 A
  • Rds On - Drain-Source Resistance: 1.5 mOhms
  • Vgs th - Gate-Source Threshold Voltage: 2.2 V
  • Vgs - Gate-Source Voltage: 20 V
  • Qg - Gate Charge: 210 nC
  • Minimum Operating Temperature: - 55 C
  • Maximum Operating Temperature: + 175 C
  • Pd - Power Dissipation: 375 W
  • Configuration: Single
  • Channel Mode: Enhancement
  • Tradename: OptiMOS
  • Packaging: Cut Tape
  • Packaging: Reel
  • Transistor Type: 1 N-Channel
  • Brand: Technologies
  • Forward Transconductance - Min: 132 S
  • Fall Time: 27 ns
  • Product Type: MOSFET
  • Rise Time: 23 ns
  • Factory Pack Quantity: 1000
  • Subcategory: MOSFETs
  • Typical Turn-Off Delay Time: 80 ns
  • Typical Turn-On Delay Time: 33 ns
  • Part # Aliases: IPB017N10N5LF SP001503850
  • Unit Weight: 0.077603 oz
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    MOSFET (IPB017N10N5LFATMA1) 10 of Pack - MOSFETS DIFFERENTIATED MOSFET

    MOSFET (IPB017N10N5LFATMA1) 10 of Pack - MOSFETS DIFFERENTIATED MOSFET

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